Atom-scale model could help improve material growth for advanced electronics
Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manufacturers produce higher-quality material for advanced electronics while reducing costly trial-and-error experiments.
Penn State researchers have refined an atom-scale model of how silicon carbide changes from a solid into vapor during crystal growth, work that could help manufacturers produce higher-quality material for advanced electronics while reducing costly trial-and-error experiments. This story matters for Science & Discovery readers tracking science. Reported by phys.org. Read the full original at the source link below.
Originally reported by phys.org. LearningWire.com curates and briefs the science & discovery stories that matter. Our editorial policy →
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